Photoelectric Information Institute develops a novel high-infrared polarization response photodetector

On May 3, "Nano Energy" (2017, 37, 53-60) published the latest research results of the first author of the Institute of Optoelectronic Information, Ye Lei, published online. "Based on black scales - tungsten selenide grating vertical different Highly-sensitive sensitive infrared photodetector based on black phosphorus-on-WSe2 photogate vertical heterostructure. The work was done by Ye Lei, a researcher of Hu Weida, Shanghai Institute of Technology Physics, Chinese Academy of Sciences, and Professor Xu Jianbin, a Chinese University of Hong Kong. Ye Lei was the first author, and Hu Weida and Xu Jianbin were the authors of the correspondence.

At present, China's infrared detection technology is in the initial stage of development to the 4th generation, especially in the exploration and development of a new generation of low-cost, room temperature infrared detectors is imminent. In recent years, new low-dimensional infrared detection materials represented by two-dimensional materials have attracted the attention of researchers. These low-dimensional nanomaterials have special size effects, high specific surface area, quantum effects and other characteristics that make them play an important role in optoelectronic physics, electronic devices, condensed matter physics and other applications. Compared to traditional thin-film semiconductor materials (Si, InGaAs, HgCdTe, indium antimonide, etc.), 2D materials are extremely thin (nanometer-scale), allowing the detector to have very low darkness The characteristics of the current can realize highly sensitive infrared photoelectric detection at room temperature, and the high mobility characteristics of the two-dimensional material also make the detector have a very fast response speed. Therefore, the infrared photodetector based on two-dimensional materials is expected to achieve light weight, low dark current, high response rate, room temperature infrared detection, and will be the most powerful contender for a new generation of high-performance infrared detectors.

Ye Lei uses a two-dimensional material fixed-point transfer method to transfer the black phosphorus, which is a two-dimensional material with polarization characteristics, onto the tungsten carbide, which is a two-dimensional material, to produce a black phosphorus-on-selenide tungsten vertical grating heterojunction polarization infrared. Photodetector. In the black phosphorus-on-selenide tungsten device, a built-in electric field exists between the black phosphorus and the tungsten diselenide, which improves the separation of the photo-generated carriers, thereby realizing highly sensitive infrared photoelectric detection. In addition, since the black phosphorus is located in the channel of the tungsten selenide, the interference of the polarization-dependent photoelectric response between the black phosphorus and the metal electrode is eliminated. This two-dimensional material grating vertical heterojunction device has the opportunity to realize high-resolution infrared imaging in a complex environment.

Ye Lei came to work in May 2016 and joined Prof. Jianfeng Feng. The main research directions include: two-dimensional material optoelectronic devices, organic thin film photovoltaic devices, flexible electronic packaging. Since entering the Institute of Optoelectronic Information, as the first author and correspondent author, other related work has been published in the field of photodetector detectors (ACS Photonics 2016, 3, 692-699; ACS Photonics 2017, 4, 823-829.) . (Correspondent Tian Li)

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