According to the Swiss Federal Institute of Materials Research (EMPA), the Institute has made significant progress in the development of nano-transistors in cooperation with the Max Planck Institute of Polymer Science and the University of California, Berkeley, and the core structure made of graphene nanoribbons has been greatly increased. The performance and yield of nano-transistors have been improved, creating conditions for nano-semiconductor devices to enter the practical stage. Graphene nanoribbons made of graphene materials can exhibit excellent semiconductor properties, but their semiconductor properties are closely related to the arrangement of carbon atoms at the edges of graphene nanoribbons. For example, the carbon atoms at the edges are arranged in a zigzag pattern, showing metal. The properties of the conductor, such as in the form of a regular "armchair", show the semiconductor properties, so the requirements for its preparation techniques are very strict. According to reports, the research team has developed a new method to vaporize pre-prepared carbon molecular materials in a high-vacuum environment, such as a puzzle, which is gradually deposited on the base of a gold material to form a width of 1 nm and a length of 50. Nano-graphene nanoribbons. This graphene nanostructure can only be observed by tunnel scanning microscopy. It has a precisely ordered atomic arrangement with a width of 9 carbon atoms. The carbon atoms at the edges are arranged in a neat "armchair" and therefore large enough. A very accurate energy band gap exhibits excellent semiconductor performance, and the difference in current strength between the on state and the off state is sufficiently large.
The researchers implanted the graphene nanoribbon structure into the nano-transistor and replaced the silicon oxide material with a cerium oxide material as a dielectric layer, so that the thickness of the dielectric layer inside the nano-transistor was reduced from 50 nm to 1.5 nm, so that the nano-transistor was turned on. The conductivity of the state is increased by orders of magnitude. At the same time, the graphene nanoribbon structure, as the core of the nano-transistor, is also innovative in the arrangement of the transistors. It is no longer arranged in the horizontal and vertical directions on the transistor substrate, but is precisely arranged along the channel of the transistor, which greatly increases the finished product of the nano-transistor. rate.
The researchers implanted the graphene nanoribbon structure into the nano-transistor and replaced the silicon oxide material with a cerium oxide material as a dielectric layer, so that the thickness of the dielectric layer inside the nano-transistor was reduced from 50 nm to 1.5 nm, so that the nano-transistor was turned on. The conductivity of the state is increased by orders of magnitude. At the same time, the graphene nanoribbon structure, as the core of the nano-transistor, is also innovative in the arrangement of the transistors. It is no longer arranged in the horizontal and vertical directions on the transistor substrate, but is precisely arranged along the channel of the transistor, which greatly increases the finished product of the nano-transistor. rate.
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